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2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
T-Pack(L)
FUJI POWER MOS-FET
T-Pack(S)
10 +0.5
0.9 0.3
4.5 0.2 1.32
1.5 Max
9.3 0.5
1.2 0.2
0.8 --0.1 5.08 2.7
+0.2
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
0.4 +0.2
1. Gate 2, 4. Drain 3. Source
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 45 180 30 461.9 60 +150 -55 to +150 Unit
Equivalent circuit schematic
Drain(D)
V A A V mJ W C C *1 L=0.304mH, Vcc=24V
Gate(G) Source(S)
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V VGS=0V VGS=30V VDS=0V ID=22.5A VGS=10V ID=22.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=45A VGS=10V RGS=10 L=100 H Tch=25C IF=45A VGS=0V Tch=25C IF=45A VGS=0V -di/dt=100A/s Tch=25C
Min.
60 2.5 Tch=25C Tch=125C
Typ.
Max.
3.5 500 1.0 100 14.5 3450 1370 390 30 80 120 80 1.5
Units
V V A mA nA m S pF
3.0 10 0.2 10 12.0 10.0 25.0 2300 910 260 18 55 70 48 45 1.0 60 0.11
ns
A V ns C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
2.08 125.0
Units
C/W C/W
3.0 0.3
1
2SK2901-01L,S
Characteristics
Power Dissipation PD=f(Tc)
80 10
3
FUJI POWER MOSFET
Safe operating area ID=f(VDS):D=0.01,Tc=25C
t= 60 10
2
1s 10s D.C.
PD [W]
100s 40
ID [A]
10
1
1ms 10ms
20
10
0
100ms
t D= T t T
0 0 50 100 150
10
-1
10
-1
10
0
10
1
10
2
10
3
Tc [C]
VDS [V]
Typical output characteristics ID=f(VDS):80s pulse test,Tc=25C
100 VGS=20V 10V 80 8V 6V 5.5V 10 60 100
Typical transfer characteristics ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
ID [A]
5V
40 4.5V 1
20
4.0V
3.5V 0 0 1 2 3 4 5 0.1 0 2 4 6 8 10
ID [A]
VDS [V]
VGS [V]
Typical forward transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C
10
2
50
Typical Drain-Source on-State Resistance RDS(on)=f(ID):80s pulse test,Tch=25C
VGS= 3.5V 4.0V 4.5V 5.0V
40
RDS(on) [m ]
gfs [s]
30 5.5V
10
1
20
6V 8V 10V 20V
10
10 100
0
10
1
10
2
0
0
20
40
60
80
100
ID [A]
ID [A]
2
2SK2901-01L,S
Drain-source on-state resistance RDS(on)=f(Tch):ID=22.5A,VGS=10V
35
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA
5.0 4.5
30
4.0
25
3.5 max. 3.0
RDS(on)[m ]
20
VGS(th) [V]
max.
typ. 2.5 min. 2.0 1.5 1.0
15 typ. 10
5
0.5
0 -50 0 50 100 150
0.0
-50
-25
0
25
50
75
100
125
150
Tch [C]
Tch [C]
Typical Gate Charge Characteristics VGS=f(Qg):ID=45A,Tch=25C
50 VDS 25 10n
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
40
VGS
20 Ciss
Vcc=48V 30 30V 12V 1n 15 Coss
VGS [V]
VDS [V]
C [F]
20
10 100p
Crss
10
5
0 0 20 40 60 80 100 120 140
0
10p -2 10
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C
110 100 90 80
10
4
Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10
10
70
3
IF [A]
50 10V 40 30 20 10 5V VGS=0V
2
t [ns]
60
td(off) tf tr
10
td(on)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
1
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK2901-01L,S
Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch)
50
FUJI POWER MOSFET
Transient thermal impedance Zthch=f(t) parameter:D=t/T
10
1
40
10
0
0.5 0.2 0.1 0.05
30
I(AV) [A]
Zthch-c [K/W]
10
20
-1
0.02
t
0.01 0
10
T
D=
t T
10 -5 10
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t [s]
0 0 50 100 150
Starting Tch [C]
Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V, I(AV)<=45A
500
400
300
Eas [mJ]
200 100 0 0
50
100
150
Starting Tch [C]
4

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